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The new 650V GaN transistors/E-mode HEMT (Enhancement-mode High Electron Mobility Transistors) from TSC are now available from us. With its compact form factor, the product family meets the demands of modern high-power systems that call for higher operating currents and efficiencies alongside smaller size and lower weight. They have been specifically designed for industrial and renewable energy applications and feature the highest current GaN currently in production.
Compared to Si MOSFETs, these components offer faster switching, with gate charge (QG) of only 2.2nC to 6.7nC and gate voltage (VGS) of 6V to turn on.
Housed in thermally efficient PDFN packages, the transistors measure 5×6mm or 8×8mm and weigh 0.088 or 0.153g depending on the model. The voltage-controlled transistors impress with their figure-of-merit (FOM), ensured by low RDS(on) values that range between 50mOhm and 150mOhm, likewise model dependant. A true enhancement mode can also be activated. The transistors have zero reverse recovery loss and are easy to parallel.
Typical applications include SMPS, chargers, DC/DC converters, inverters, and in servers, telecommunications and data centres.
You will find detailed technical information, up-to-date prices and stock information as well as data sheets to download in product group:
U8771 - TAIWAN SEMICONDUCTOR (TSC) SMD Power MOSFETs E-mode GaN, Series: TSG65N, Case: PDFN |
