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With their low switching losses, the 650V SiC Schottky diodes are particularly suitable for highly efficient AC-DC, DC-DC and DC-AC applications. The components are halogen-free and RoHS-compliant, and thanks to low capacitive charge they enable significantly higher switching frequencies with lower switching losses and work reliably at junction temperatures as high as +175 °C. The diodes are aimed at applications in UPS systems, solar inverters, and data centres.
A particularly powerful highlight are TSC’s new 650V GaN transistors / E-HEMT (Enhancement-mode high electron mobility transistors). This product family meets the requirements of high-performance systems, such as higher operating currents and efficiencies, but also impresses with its compact dimensions. Compared to SiC MOSFETs, the transistors enable a lower gate charge (QG), lower gate voltage (VG), and higher switching speeds, and come in thermally efficient PDFN packages.
Schukat is also presenting the fourth generation of 600V super junction MOSFETs from TSC's NE series. Optimised for the lowest possible RDSon with minimum gate capacitance, these components have been designed for high efficiency and power density. Achieving a thirty percent improvement in figure-of-merit (FOM), they are primarily used in such applications as switching power supplies, server power supplies, and high-voltage motorbike drives.
The new power electronics from TSC will all be in the Schukat catalogue prior to the trade fair, and samples are already available on request. |
